Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
18.9 nC @ 10 V dc
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
74 W
Maximum Gate Source Voltage:
-24 V, +24 V
Maximum Gate Threshold Voltage:
2V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
31 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
48 Weeks
Detailed Description:
N-Channel 30V 20A (Ta) 1.75W (Ta), 74W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NTD20
Gate Charge (Qg) (Max) @ Vgs:
18.9nC @ 10V
Rds On (Max) @ Id, Vgs:
27mOhm @ 10A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1260pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Customer Reference:
Power Dissipation (Max):
1.75W (Ta), 74W (Tc)
Technology:
MOSFET (Metal Oxide)
