ON Semiconductor CPH3360-TL-W
Product Information
Maximum Continuous Drain Current:
1.6 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Priced to Clear:
Yes
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.6V
Maximum Drain Source Resistance:
617 mΩ
Package Type:
CPH3
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.2 nC @ 10 V
Channel Type:
P
Length:
2.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Forward Diode Voltage:
1.5V
Base Part Number:
CPH336
Detailed Description:
P-Channel 30V 1.6A (Ta) 900mW (Ta) Surface Mount 3-CPH
Input Capacitance (Ciss) (Max) @ Vds:
82pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 10V
Rds On (Max) @ Id, Vgs:
303mOhm @ 800mA, 10V
Supplier Device Package:
3-CPH
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
900mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
1.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is CPH3360-TL-W. While 1.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers single transistor configuration. Priced to Clear Options - yes. It has a maximum of 30 v drain source voltage. The product carries 2.6v of maximum gate threshold voltage. It provides up to 617 mω maximum drain source resistance. The package is a sort of cph3. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 2.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 900 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.9mm. Its forward diode voltage is 1.5v . Base Part Number: cph336. It features p-channel 30v 1.6a (ta) 900mw (ta) surface mount 3-cph. The product's input capacitance at maximum includes 82pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 2.2nc @ 10v. It has a maximum Rds On and voltage of 303mohm @ 800ma, 10v. 3-cph is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 900mw (ta). The continuous current drain at 25°C is 1.6a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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