ON Semiconductor 2N7002ET1G
Product Information
Manufacturer Standard Lead Time:
40 Weeks
Detailed Description:
N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
2N7002
Gate Charge (Qg) (Max) @ Vgs:
0.81nC @ 5V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 240mA, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
26.7pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
260mA (Ta)
Customer Reference:
Power Dissipation (Max):
300mW (Tj)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship 2N7002ET1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N7002ET1G. It has typical 40 weeks of manufacturer standard lead time. It features n-channel 60v 260ma (ta) 300mw (tj) surface mount sot-23-3 (to-236). The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: 2n7002. The maximum gate charge and given voltages include 0.81nc @ 5v. It has a maximum Rds On and voltage of 2.5ohm @ 240ma, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 26.7pf @ 25v. The product is available in surface mount configuration. sot-23-3 (to-236) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 260ma (ta). The product carries maximum power dissipation 300mw (tj). This product use mosfet (metal oxide) technology.
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