Category:
Power MOSFET
Dimensions:
10.63 x 4.9 x 16.12mm
Maximum Continuous Drain Current:
7.5 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
39 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1140 pF@ 25 V
Length:
10.63mm
Pin Count:
3
Typical Turn-Off Delay Time:
36 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
139 W
Maximum Gate Source Voltage:
30 V
Height:
16.12mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
950 mΩ
Base Part Number:
NDF08
Detailed Description:
N-Channel 600V 8.4A (Tc) 36W (Tc) Through Hole TO-220FP
Input Capacitance (Ciss) (Max) @ Vds:
1140pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.5V @ 100µA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
39nC @ 10V
Rds On (Max) @ Id, Vgs:
950mOhm @ 3.5A, 10V
Supplier Device Package:
TO-220FP
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
36W (Tc)
Current - Continuous Drain (Id) @ 25°C:
8.4A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
