ON Semiconductor NTR4502PT1G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1mm
Width:
1.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
350 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.9 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
P-Channel 30V 1.13A (Ta) 400mW (Tj) Surface Mount SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
NTR450
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.95A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
200pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.13A (Ta)
Customer Reference:
Power Dissipation (Max):
400mW (Tj)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NTR4502PT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTR4502PT1G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 6 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.25 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. It provides up to 350 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 26 weeks of manufacturer standard lead time. It features p-channel 30v 1.13a (ta) 400mw (tj) surface mount sot-23-3 (to-236). The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: ntr450. The maximum gate charge and given voltages include 10nc @ 10v. It has a maximum Rds On and voltage of 200mohm @ 1.95a, 10v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 200pf @ 15v. sot-23-3 (to-236) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.13a (ta). The product carries maximum power dissipation 400mw (tj). This product use mosfet (metal oxide) technology.
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