Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
18.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
30 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
1.5mm
Width:
7.3mm
Length:
6.5mm
Maximum Drain Source Resistance:
51 mΩ
Package Type:
ATPAK
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
ATP101
Detailed Description:
P-Channel 30V 25A (Ta) 30W (Tc) Surface Mount ATPAK
Input Capacitance (Ciss) (Max) @ Vds:
875pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
30mOhm @ 13A, 10V
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
18.5nC @ 10V
Supplier Device Package:
ATPAK
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
ATPAK (2 leads+tab)
Power Dissipation (Max):
30W (Tc)
Current - Continuous Drain (Id) @ 25°C:
25A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
