Nexperia USA Inc. PSMN1R8-40YLC,115

PSMN1R8-40YLC-115 Nexperia USA Inc. PSMN1R8-40YLC,115
Nexperia USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.95V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
96 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
272W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6680 pF @ 20 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56, Power-SO8
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN1R8
ECCN:
EAR99
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The PSMN1R8-40YLC,115 from Nexperia USA Inc., is a high-performance N-channel logic level SMD MOSFET designed for demanding applications. This power MOSFET boasts impressive specifications, including a maximum drain-source voltage (VDS) of 40 V, a continuous drain current (ID) of 100 A, and a gate charge (Qg) of 115 nC. Its low on-resistance (Rds(on)) of 1.8 milliohms ensures minimal power dissipation, while its fast switching speed enables efficient operation in high-frequency circuits. The MOSFET's compact SMD package and lead-free construction make it ideal for surface mount assembly, simplifying integration into various electronic systems.

Standout Features & Benefits of PSMN1R8-40YLC,115:

  • High current capability (100 A) for power-intensive applications
  • Low on-resistance (1.8 milliohms) for minimal power loss
  • Fast switching speed for efficient operation at high frequencies
  • Logic level gate drive for compatibility with various control circuits
  • Compact SMD package for easy surface mount assembly
  • Lead-free construction for environmental compliance.

Diverse Applications of PSMN1R8-40YLC,115 MOSFET:

  • Power supplies and converters
  • Motor control and drives
  • Battery management systems
  • Lighting ballasts
  • Audio amplifiers
  • Industrial automation
  • Telecom infrastructure.

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Mult Dev Wafer Test Chgs 4/Feb/2022(PCN Assembly/Origin)
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PSMN1R8-40YLC(Datasheets)
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New Clip Design 16/Mar/2016(PCN Design/Specification)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)
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Logo 10/Dec/2016(PCN Packaging)

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FAQs

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