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The PSMN1R8-40YLC,115 from Nexperia USA Inc., is a high-performance N-channel logic level SMD MOSFET designed for demanding applications. This power MOSFET boasts impressive specifications, including a maximum drain-source voltage (VDS) of 40 V, a continuous drain current (ID) of 100 A, and a gate charge (Qg) of 115 nC. Its low on-resistance (Rds(on)) of 1.8 milliohms ensures minimal power dissipation, while its fast switching speed enables efficient operation in high-frequency circuits. The MOSFET's compact SMD package and lead-free construction make it ideal for surface mount assembly, simplifying integration into various electronic systems.
For more information please check the datasheets.
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