ON Semiconductor 2SJ652-1E
Product Information
Dimensions:
10.16 x 4.7 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Height:
15.87mm
Width:
4.7mm
Length:
10.16mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Base Part Number:
2SJ652
Detailed Description:
P-Channel 60V 28A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220F-3SG
Input Capacitance (Ciss) (Max) @ Vds:
4360pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Through Hole
Rds On (Max) @ Id, Vgs:
38mOhm @ 14A, 10V
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
80nC @ 10V
Supplier Device Package:
TO-220F-3SG
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
2W (Ta), 30W (Tc)
Current - Continuous Drain (Id) @ 25°C:
28A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET10995451 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10995451.
Yes. We ship 2SJ652-1E Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2SJ652-1E. The given dimensions of the product include 10.16 x 4.7 x 15.87mm. The product is available in through hole configuration. Provides up to 30 w maximum power dissipation. In addition, the height is 15.87mm. Furthermore, the product is 4.7mm wide. Its accurate length is 10.16mm. The package is a sort of to-220. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. It contains 3 pins. Base Part Number: 2sj652. It features p-channel 60v 28a (ta) 2w (ta), 30w (tc) through hole to-220f-3sg. The product's input capacitance at maximum includes 4360pf @ 20v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It has a maximum Rds On and voltage of 38mohm @ 14a, 10v. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 80nc @ 10v. to-220f-3sg is the supplier device package value. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 2w (ta), 30w (tc). The continuous current drain at 25°C is 28a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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