ON Semiconductor NTHS4101PT1G
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
25 nC @ 4.5 V dc
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1.1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
52 mΩ
Package Type:
ChipFET
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6.7 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
36 Weeks
Detailed Description:
P-Channel 20V 4.8A (Tj) 1.3W (Ta) Surface Mount ChipFET™
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Base Part Number:
NTHS41
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 4.5V
Rds On (Max) @ Id, Vgs:
34mOhm @ 4.8A, 4.5V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
2100pF @ 16V
Mounting Type:
Surface Mount
Supplier Device Package:
ChipFET™
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.8A (Tj)
Customer Reference:
Power Dissipation (Max):
1.3W (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NTHS4101PT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTHS4101PT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 25 nc @ 4.5 v dc. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3.1mm. It provides up to 52 mω maximum drain source resistance. The package is a sort of chipfet. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 36 weeks of manufacturer standard lead time. It features p-channel 20v 4.8a (tj) 1.3w (ta) surface mount chipfet™. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat lead. Base Part Number: nths41. The maximum gate charge and given voltages include 35nc @ 4.5v. It has a maximum Rds On and voltage of 34mohm @ 4.8a, 4.5v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 2100pf @ 16v. chipfet™ is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4.8a (tj). The product carries maximum power dissipation 1.3w (ta). This product use mosfet (metal oxide) technology.
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