Microsemi Corporation APT58M50JU2
Product Information
Manufacturer Standard Lead Time:
36 Weeks
Rds On (Max) @ Id, Vgs:
65mOhm @ 42A, 10V
Detailed Description:
N-Channel 500V 58A (Tc) 543W (Tc) Chassis Mount SOT-227
Input Capacitance (Ciss) (Max) @ Vds:
10800pF @ 25V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Series:
POWER MOS 8™
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
340nC @ 10V
Supplier Device Package:
SOT-227
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
SOT-227-4, miniBLOC
Power Dissipation (Max):
543W (Tc)
Drain to Source Voltage (Vdss):
500V
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT58M50JU2. It has typical 36 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 65mohm @ 42a, 10v. It features n-channel 500v 58a (tc) 543w (tc) chassis mount sot-227. The product's input capacitance at maximum includes 10800pf @ 25v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product power mos 8™, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 340nc @ 10v. sot-227 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sot-227-4, minibloc. The product carries maximum power dissipation 543w (tc). The product has a 500v drain to source voltage. The continuous current drain at 25°C is 58a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
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