Rohm Semiconductor RQ3E120BNTB

RQ3E120BNTB Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
9.3mOhm @ 12A, 10V
title:
RQ3E120BNTB
Vgs(th) (Max) @ Id:
2.5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
RQ3E120BNTB Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/5042793
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Ta)
standardLeadTime:
21 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
Supplier Device Package:
8-HSMT (3.2x3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RQ3E120
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ3E120BNTB. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 9.3mohm @ 12a, 10v. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2w (ta). It has a long 21 weeks standard lead time. The product's input capacitance at maximum includes 1500 pf @ 15 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 29 nc @ 10 v. 8-hsmt (3.2x3) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 12a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to rq3e120, a base product number of the product. The product is designated with the ear99 code number.

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RQ3E120BN ESD Data(Environmental Information)
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Transistor, MOSFET Level 1 MSL(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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HSMT8-HF Constitution Material List(Environmental Information)
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HSMT8 TB Taping Spec(Datasheets)
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HSMT8 Part Marking(Other Related Documents)
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Transistor, MOSFET Flammability(Other Related Documents)
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HSMT8 Inner Structure(Other Related Documents)

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FAQs

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