Fairchild/ON Semiconductor IRF644B_FP001
Product Information
Rds On (Max) @ Id, Vgs:
280 mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
1600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
250V
Standard Package:
50
Supplier Device Package:
TO-220AB
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-220-3
Power Dissipation (Max):
139W (Tc)
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Fairchild/ON Semiconductor
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship IRF644B_FP001 Internationally to many countries around the world.
This is manufactured by Fairchild/ON Semiconductor. The manufacturer part number is IRF644B_FP001. It has a maximum Rds On and voltage of 280 mohm @ 7a, 10v. The product's input capacitance at maximum includes 1600pf @ 25v. The maximum gate charge and given voltages include 60nc @ 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 250v drain to source voltage. It is available in the standard package of 50. to-220ab is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in to-220-3. The product carries maximum power dissipation 139w (tc). The continuous current drain at 25°C is 14a (tc). This product use mosfet (metal oxide) technology. The fairchild/on semiconductor's product offers user-desired applications.
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