Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.1 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
310 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.8mm
Width:
0.95mm
Length:
1.7mm
Maximum Drain Source Resistance:
1 Ω
Package Type:
SOT-523 (SC-89)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
760 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NTE4151
Detailed Description:
P-Channel 20V 760mA (Tj) 313mW (Tj) Surface Mount SC-89-3
Input Capacitance (Ciss) (Max) @ Vds:
156pF @ 5V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±6V
Gate Charge (Qg) (Max) @ Vgs:
2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
360mOhm @ 350mA, 4.5V
Supplier Device Package:
SC-89-3
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SC-89, SOT-490
Power Dissipation (Max):
313mW (Tj)
Current - Continuous Drain (Id) @ 25°C:
760mA (Tj)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
