Maximum Drain Source Voltage:
8 V
Typical Gate Charge @ Vgs:
6.4 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
330 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.9mm
Width:
1.35mm
Length:
2.2mm
Minimum Gate Threshold Voltage:
0.45V
Package Type:
SOT-323 (SC-70)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Maximum Drain Source Resistance:
210 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
P-Channel 8V 1.4A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)
Vgs(th) (Max) @ Id:
700mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Base Part Number:
NTS2101
Gate Charge (Qg) (Max) @ Vgs:
6.4nC @ 5V
Rds On (Max) @ Id, Vgs:
100mOhm @ 1A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
8V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
640pF @ 8V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70-3 (SOT323)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta)
Customer Reference:
Power Dissipation (Max):
290mW (Ta)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is NTS2101PT1G. It has a maximum of 8 v drain source voltage. With a typical gate charge at Vgs includes 6.4 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 330 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.9mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas its minimum gate threshold voltage includes 0.45v. The package is a sort of sot-323 (sc-70). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 210 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 52 weeks of manufacturer standard lead time. It features p-channel 8v 1.4a (ta) 290mw (ta) surface mount sc-70-3 (sot323). The typical Vgs (th) (max) of the product is 700mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-70, sot-323. Base Part Number: nts2101. The maximum gate charge and given voltages include 6.4nc @ 5v. It has a maximum Rds On and voltage of 100mohm @ 1a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 8v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 640pf @ 8v. sc-70-3 (sot323) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.4a (ta). The product carries maximum power dissipation 290mw (ta). This product use mosfet (metal oxide) technology.
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