This is manufactured by Rohm Semiconductor. The manufacturer part number is RSR025N03TL. Base Part Number: rsr025. It features n-channel 30v 2.5a (ta) 1w (ta) surface mount tsmt3. The product's input capacitance at maximum includes 165pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is 20v. The maximum gate charge and given voltages include 4.1nc @ 5v. It has a maximum Rds On and voltage of 70mohm @ 2.5a, 10v. tsmt3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-96. The product carries maximum power dissipation 1w (ta). The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RSR025N03TL. Base Part Number: rsr025. It features n-channel 30v 2.5a (ta) 1w (ta) surface mount tsmt3. The product's input capacitance at maximum includes 165pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is 20v. The maximum gate charge and given voltages include 4.1nc @ 5v. It has a maximum Rds On and voltage of 70mohm @ 2.5a, 10v. tsmt3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-96. The product carries maximum power dissipation 1w (ta). The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.
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