Microsemi Corporation APTM120DA30CT1G
Product Information
Rds On (Max) @ Id, Vgs:
360mOhm @ 25A, 10V
Detailed Description:
N-Channel 1200V 31A (Tc) 657W (Tc) Chassis Mount SP1
Input Capacitance (Ciss) (Max) @ Vds:
14560pF @ 25V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Series:
POWER MOS 8™
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
560nC @ 10V
Supplier Device Package:
SP1
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
SP1
Power Dissipation (Max):
657W (Tc)
Drain to Source Voltage (Vdss):
1200V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
Checking for live stock
FAQs
Yes. You can also search APTM120DA30CT1G on website for other similar products.
We accept all major payment methods for all products including ET10710669. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with APTM120DA30CT1G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation APTM120DA30CT1G. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation APTM120DA30CT1G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10710669 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10710669.
Yes. We ship APTM120DA30CT1G Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTM120DA30CT1G. It has a maximum Rds On and voltage of 360mohm @ 25a, 10v. It features n-channel 1200v 31a (tc) 657w (tc) chassis mount sp1. The product's input capacitance at maximum includes 14560pf @ 25v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product power mos 8™, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 560nc @ 10v. sp1 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sp1. The product carries maximum power dissipation 657w (tc). The product has a 1200v drain to source voltage. The continuous current drain at 25°C is 31a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.