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STMicroelectronics PD57006-E N-channel MOSFET, 1 A, 65 V, 4-Pin PowerSO

PD57006-E STMicroelectronics  N-channel MOSFET, 1 A, 65 V, 4-Pin PowerSO
PD57006-E
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
65 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
20 W
Minimum Operating Temperature:
-65 °C
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
5V
Height:
3.5mm
Width:
9.4mm
Length:
7.5mm
Minimum Gate Threshold Voltage:
2V
Package Type:
PowerSO
Number of Elements per Chip:
1
Typical Power Gain:
15 dB
Maximum Continuous Drain Current:
1 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+165 °C
Pin Count:
4
Transistor Configuration:
Single
Voltage - Rated:
65 V
RoHS Status:
ROHS3 Compliant
Package / Case:
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current - Test:
70 mA
HTSUS:
8541.29.0095
Noise Figure:
-
REACH Status:
REACH Unaffected
Gain:
15dB
Package:
Tube
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Current Rating (Amps):
1A
Series:
-
Supplier Device Package:
PowerSO-10RF (Formed Lead)
Voltage - Test:
28 V
Frequency:
945MHz
Power - Output:
6W
Technology:
LDMOS
Base Product Number:
PD57006
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 1 A 65 V 4-Pin PowerSO manufactured by STMicroelectronics. The manufacturer part number is PD57006-E. It has a maximum of 65 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 20 w maximum power dissipation. Whereas, the minimum operating temperature of the product is -65 °c. It features a maximum gate source voltage of -20 v, +20 v. The product carries 5v of maximum gate threshold voltage. In addition, the height is 3.5mm. Furthermore, the product is 9.4mm wide. Its accurate length is 7.5mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of powerso. It consists of 1 elements per chip. It has about 15 db typical power gain . While 1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +165 °c. It contains 4 pins. The product offers single transistor configuration. It also exhibits voltage rating of 65 v. The product is rohs3 compliant. Moreover, the product comes in powerso-10rf exposed bottom pad (2 formed leads). The given current test of the product is [Current -Test]. It is assigned with possible HTSUS value of 8541.29.0095. In addition, it is reach unaffected. The 15db is the gain value of a bespoke product. It is shipped in tube package . Its typical moisture sensitivity level is 3 (168 hours). Additionally, the product's output is 1a. powerso-10rf (formed lead) is the supplier device package value. The product has a test voltage of 28 v . Supplied with 945mhz of frequency. The product has an output power 6w. This product use ldmos technology. Moreover, it corresponds to pd57006, a base product number of the product. The product is designated with the ear99 code number.

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PD57006-E PD57006S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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PD57006(S)-E(Datasheets)
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PD57006-E View All Specifications(Other Related Documents)

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