General Electric GE17080CDA3
Product Information
FET Feature:
Silicon Carbide (SiC)
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 160mA
Operating Temperature:
-55°C ~ 150°C (Tc)
Package / Case:
Module
Current - Continuous Drain (Id) @ 25°C:
765A
Rds On (Max) @ Id, Vgs:
2.23mOhm @ 765A, 20V
Gate Charge (Qg) (Max) @ Vgs:
2414nC @ 18V
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Affected
FET Type:
2 N-Channel (Half Bridge)
Package:
Bulk
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Moisture Sensitivity Level (MSL):
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds:
58000pF @ 900V
Mounting Type:
Chassis Mount
Series:
SiC Power
Power - Max:
2350W
ECCN:
EAR99
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FAQs
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Yes. We ship GE17080CDA3 Internationally to many countries around the world.
This is manufactured by General Electric. The manufacturer part number is GE17080CDA3. The FET features of the product include silicon carbide (sic). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 160ma. The product has -55°c ~ 150°c (tc) operating temperature range. Moreover, the product comes in module. The continuous current drain at 25°C is 765a. It has a maximum Rds On and voltage of 2.23mohm @ 765a, 20v. The maximum gate charge and given voltages include 2414nc @ 18v. The product is rohs non-compliant. In addition, it is reach affected. It carries FET type 2 n-channel (half bridge). It is shipped in bulk package . The product has a 1200v (1.2kv) drain to source voltage. Its typical moisture sensitivity level is not applicable. The product's input capacitance at maximum includes 58000pf @ 900v. The product is available in chassis mount configuration. The product sic power, is a highly preferred choice for users. The maximum power of the product is 2350w. The product is designated with the ear99 code number.
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