Maximum Continuous Drain Current:
30 A, 40 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
25 V
Package Type:
Power 56
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V, 45 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.2 W, 2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.9 mΩ, 8.7 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
5.6mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
15A, 26A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1680pF @ 13V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
Power56
Power - Max:
1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS3602
ECCN:
EAR99
This is Dual N-Channel MOSFET 30 A 40 A 25 V 8-Pin Power 56 manufactured by onsemi. The manufacturer part number is FDMS3602S. While 30 a, 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6mm wide. The product offers series transistor configuration. It has a maximum of 25 v drain source voltage. The package is a sort of power 56. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 19 nc @ 10 v, 45 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.2 w, 2.5 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.9 mω, 8.7 mω maximum drain source resistance. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 5.6mohm @ 15a, 10v. The maximum gate charge and given voltages include 27nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 15a, 26a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 25v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1680pf @ 13v. The product powertrench®, is a highly preferred choice for users. power56 is the supplier device package value. The maximum power of the product is 1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdms3602, a base product number of the product. The product is designated with the ear99 code number.
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