Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
0.85mm
Width:
1.6mm
Length:
2mm
Maximum Drain Source Resistance:
378 mΩ
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate, 4V Drive
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
188mOhm @ 900mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
1.8A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
88pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88FL/MCPH6
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MCH6661
ECCN:
EAR99
This is Dual N-Channel MOSFET 1.8 A 30 V 6-Pin SOT-363 manufactured by onsemi. The manufacturer part number is MCH6661-TL-W. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 2 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 800 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.6v of maximum gate threshold voltage. In addition, the height is 0.85mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2mm. It provides up to 378 mω maximum drain source resistance. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. While 1.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate, 4v drive. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 188mohm @ 900ma, 10v. The maximum gate charge and given voltages include 2nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 1.8a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 88pf @ 10v. sc-88fl/mcph6 is the supplier device package value. The maximum power of the product is 800mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to mch6661, a base product number of the product. The product is designated with the ear99 code number.
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