Dual N-Channel MOSFET, 700 mA, 450 V, 8-Pin SOIC ON Semiconductor FW276-TL-2H
Product Information
Maximum Drain Source Voltage:
450 V
Typical Gate Charge @ Vgs:
3.7 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.5V
Height:
1.375mm
Width:
3.9mm
Length:
4.9mm
Maximum Drain Source Resistance:
12.1 Ω
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
700 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
12.1Ohm @ 350mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
3.7nC @ 10V
REACH Status:
REACH Unaffected
edacadModel:
FW276-TL-2H Models
Current - Continuous Drain (Id) @ 25°C:
700mA
edacadModelUrl:
/en/models/5022555
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
450V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
55pF @ 20V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
1.6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FW276
ECCN:
EAR99
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET, 700 mA, 450 V, 8-Pin SOIC ON Semiconductor FW276-TL-2H. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET, 700 mA, 450 V, 8-Pin SOIC ON Semiconductor FW276-TL-2H.
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Yes. We ship FW276-TL-2H Internationally to many countries around the world.
This is Dual N-Channel MOSFET 700 mA 450 V 8-Pin SOIC ON Semiconductor manufactured by onsemi. The manufacturer part number is FW276-TL-2H. It has a maximum of 450 v drain source voltage. With a typical gate charge at Vgs includes 3.7 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4.5v of maximum gate threshold voltage. In addition, the height is 1.375mm. Furthermore, the product is 3.9mm wide. Its accurate length is 4.9mm. It provides up to 12.1 ω maximum drain source resistance. The package is a sort of soic. It consists of 2 elements per chip. While 700 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 12.1ohm @ 350ma, 10v. The maximum gate charge and given voltages include 3.7nc @ 10v. In addition, it is reach unaffected. The continuous current drain at 25°C is 700ma. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 450v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 55pf @ 20v. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 1.6w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fw276, a base product number of the product. The product is designated with the ear99 code number.
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