Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin ECH8, SOT-28FL onsemi ECH8659-TL-W
Product Information
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
ECH8, SOT-28FL
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11.8 nC @ 10 V
Channel Type:
N
Length:
2.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.88mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
55 mΩ
FET Feature:
Logic Level Gate, 4V Drive
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
24mOhm @ 3.5A, 10V
edacadModel:
ECH8659-TL-W Models
Gate Charge (Qg) (Max) @ Vgs:
11.8nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
7A
edacadModelUrl:
/en/models/5845543
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
710pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-28FL/ECH8
Power - Max:
1.3W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ECH8659
ECCN:
EAR99
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This is Dual N-Channel MOSFET 7 A 30 V 8-Pin ECH8 SOT-28FL manufactured by onsemi. The manufacturer part number is ECH8659-TL-W. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.3mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.6v of maximum gate threshold voltage. The package is a sort of ech8, sot-28fl. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.88mm. Its forward diode voltage is 1.2v . It provides up to 55 mω maximum drain source resistance. The FET features of the product include logic level gate, 4v drive. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat lead. It has a maximum Rds On and voltage of 24mohm @ 3.5a, 10v. The maximum gate charge and given voltages include 11.8nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 7a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 710pf @ 10v. sot-28fl/ech8 is the supplier device package value. The maximum power of the product is 1.3w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ech8659, a base product number of the product. The product is designated with the ear99 code number.
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