ON Semiconductor NDS9952A-F011

ON Semiconductor

Product Information

FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
80mOhm @ 1A, 10V
Detailed Description:
Mosfet Array N and P-Channel 30V 2.9A 900mW (Ta) Surface Mount 8-SO
Input Capacitance (Ciss) (Max) @ Vds:
320pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SO
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
900mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.9A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NDS9952A-F011. The FET features of the product include standard. It has a maximum Rds On and voltage of 80mohm @ 1a, 10v. It features mosfet array n and p-channel 30v 2.9a 900mw (ta) surface mount 8-so. The product's input capacitance at maximum includes 320pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.8v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). 8-so is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 900mw (ta). The continuous current drain at 25°C is 2.9a. The on semiconductor's product offers user-desired applications.

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Mult Dev EOL 8/Apr/2021(PCN Obsolescence/ EOL)
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NDS9952A(Datasheets)

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