ON Semiconductor FDS6900AS-G

ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
27mOhm @ 6.9A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 6.9A, 8.2A 900mW (Ta) Surface Mount 8-SO
Input Capacitance (Ciss) (Max) @ Vds:
600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA, 3V @ 1mA
Series:
PowerTrench®, SyncFET™
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SO
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
900mW (Ta)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
6.9A, 8.2A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDS6900AS-G. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 27mohm @ 6.9a, 10v. It features mosfet array 2 n-channel (dual) 30v 6.9a, 8.2a 900mw (ta) surface mount 8-so. The product's input capacitance at maximum includes 600pf @ 15v. The maximum gate charge and given voltages include 15nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa, 3v @ 1ma. The product powertrench®, syncfet™, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). 8-so is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 900mw (ta). The product has a 30v drain to source voltage. The continuous current drain at 25°C is 6.9a, 8.2a. The on semiconductor's product offers user-desired applications.

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Mult Dev EOL 8/Apr/2021(PCN Obsolescence/ EOL)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDS6900AS-G and the best services all around the world ET21442243. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDS6900AS-G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FDS6900AS-G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDS6900AS-G. We stock a large inventory containing a wide range of variety ET21442243, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDS6900AS-G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21442243 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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