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This is N-Channel MOSFET Transistor 38 A 60 V 12-Pin WQFN12 manufactured by ON Semiconductor. The manufacturer part number is NTTFD9D0N06HLTWG. It has a maximum of 60 v drain source voltage. While 38 a of maximum continuous drain current. The product carries enhancement channel mode. The product nttf, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 9 o maximum drain source resistance. The package is a sort of wqfn12. It consists of 1 elements per chip. It contains 12 pins. The FET features of the product include standard. Base Part Number: nttfd9. It features mosfet array 2 n-channel (dual) 60v 9a (ta), 38a (tc) 1.7w (ta), 26w (tc) surface mount 12-wqfn (3.3x3.3). The product's input capacitance at maximum includes 948pf @ 30v. The maximum gate charge and given voltages include 13.5nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 50µa. The product has a 60v drain to source voltage. Moreover, the product comes in 12-powerwqfn. It has a maximum Rds On and voltage of 9mohm @ 10a, 10v. 12-wqfn (3.3x3.3) is the supplier device package value. It has typical 23 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1.7w (ta), 26w (tc). The continuous current drain at 25°C is 9a (ta), 38a (tc). The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative N-Channel MOSFET Transistor, 38 A, 60 V, 12-Pin WQFN12 ON Semiconductor NTTFD9D0N06HLTWG and the best services all around the world ET20013996. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, N-Channel MOSFET Transistor, 38 A, 60 V, 12-Pin WQFN12 ON Semiconductor NTTFD9D0N06HLTWG, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.
Our N-Channel MOSFET Transistor, 38 A, 60 V, 12-Pin WQFN12 ON Semiconductor NTTFD9D0N06HLTWG is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTTFD9D0N06HLTWG. We stock a large inventory containing a wide range of variety ET20013996, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from N-Channel MOSFET Transistor, 38 A, 60 V, 12-Pin WQFN12 ON Semiconductor NTTFD9D0N06HLTWG. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET20013996 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
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