Rohm Semiconductor HP8M51TB1

HP8M51TB1 Rohm Semiconductor
HP8M51TB1
Rohm Semiconductor

Product Information

FET Feature:
Standard
Base Part Number:
HP8M51
Detailed Description:
Mosfet Array N and P-Channel 100V 4.5A (Ta) 3W (Ta) Surface Mount 8-HSOP
Input Capacitance (Ciss) (Max) @ Vds:
600pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:
15nC, 26.2nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
100V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Supplier Device Package:
8-HSOP
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
3W (Ta)
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is HP8M51TB1. The FET features of the product include standard. Base Part Number: hp8m51. It features mosfet array n and p-channel 100v 4.5a (ta) 3w (ta) surface mount 8-hsop. The product's input capacitance at maximum includes 600pf @ 50v. The maximum gate charge and given voltages include 15nc, 26.2nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 100v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 170mohm @ 4.5a, 10v, 290mohm @ 4.5a, 10v. 8-hsop is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 3w (ta). The continuous current drain at 25°C is 4.5a (ta). The rohm semiconductor's product offers user-desired applications.

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HP8M51 Datasheet(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor HP8M51TB1 and the best services all around the world ET18381495. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor HP8M51TB1, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor HP8M51TB1 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at HP8M51TB1. We stock a large inventory containing a wide range of variety ET18381495, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor HP8M51TB1. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET18381495 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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