Rohm Semiconductor UT6MA2TCR

UT6MA2TCR Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Standard
Base Part Number:
UT6MA2
Detailed Description:
Mosfet Array N and P-Channel 30V 4A (Ta) 2W (Ta) Surface Mount HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds:
180pF, 305pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
4.3nC, 6.7nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-PowerUDFN
Rds On (Max) @ Id, Vgs:
46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
Supplier Device Package:
HUML2020L8
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is UT6MA2TCR. The FET features of the product include standard. Base Part Number: ut6ma2. It features mosfet array n and p-channel 30v 4a (ta) 2w (ta) surface mount huml2020l8. The product's input capacitance at maximum includes 180pf, 305pf @ 15v. The maximum gate charge and given voltages include 4.3nc, 6.7nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. Moreover, the product comes in 8-powerudfn. It has a maximum Rds On and voltage of 46mohm @ 4a, 10v, 70mohm @ 4a, 10v. huml2020l8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 2w (ta). The continuous current drain at 25°C is 4a (ta). The rohm semiconductor's product offers user-desired applications.

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UT6MA2(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor UT6MA2TCR and the best services all around the world ET18222707. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor UT6MA2TCR, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor UT6MA2TCR is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at UT6MA2TCR. We stock a large inventory containing a wide range of variety ET18222707, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor UT6MA2TCR. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET18222707 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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