Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
23 (Q1) nC @ 10 V, 84 (Q2) nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
26 (Q1) W, 42 (Q2) W
Maximum Gate Source Voltage:
Q2) V, +16/-12 (Q1
Maximum Gate Threshold Voltage:
2.5 (Q1) V, 3 (Q2) V
Channel Type:
N
Width:
6.15mm
Length:
5.1mm
Maximum Drain Source Resistance:
1.6 mΩ
Package Type:
PGFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
70 (Q1) A, 164 (Q2) A
Minimum Gate Threshold Voltage:
0.8 (Q1) V, 1 (Q2) V
Forward Diode Voltage:
1.2V
Height:
0.75mm
Maximum Operating Temperature:
+150 °C
Pin Count:
8
FET Feature:
Standard
Base Part Number:
FDMS1
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc) 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Surface Mount 8-PQFN (5x6)
Input Capacitance (Ciss) (Max) @ Vds:
1410pF @ 15V, 4860pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
33nC @ 10V, 117nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 320µA, 3V @ 1mA
Series:
PowerTrench®
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Asymmetrical
Customer Reference:
Power - Max:
2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Manufacturer:
ON Semiconductor
