Toshiba Semiconductor and Storage SSM6N815R,LF
Product Information
FET Feature:
Logic Level Gate, 4V Drive
Base Part Number:
TCR2LE
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 100V 2A (Ta) 1.8W (Ta) Surface Mount 6-TSOP-F
Input Capacitance (Ciss) (Max) @ Vds:
290pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
3.1nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Series:
U-MOSVIII-H
Package / Case:
6-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
103mOhm @ 2A, 10V
Supplier Device Package:
6-TSOP-F
Manufacturer Standard Lead Time:
12 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.8W (Ta)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N815R,LF. The FET features of the product include logic level gate, 4v drive. Base Part Number: tcr2le. It features mosfet array 2 n-channel (dual) 100v 2a (ta) 1.8w (ta) surface mount 6-tsop-f. The product's input capacitance at maximum includes 290pf @ 15v. The maximum gate charge and given voltages include 3.1nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 100µa. The product u-mosviii-h, is a highly preferred choice for users. Moreover, the product comes in 6-smd, flat leads. It has a maximum Rds On and voltage of 103mohm @ 2a, 10v. 6-tsop-f is the supplier device package value. It has typical 12 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1.8w (ta). The product has a 100v drain to source voltage. The continuous current drain at 25°C is 2a (ta). The toshiba semiconductor and storage's product offers user-desired applications.
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