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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N815R,LF. The FET features of the product include logic level gate, 4v drive. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c operating temperature range. Moreover, the product comes in 6-smd, flat leads. It has a maximum Rds On and voltage of 103mohm @ 2a, 10v. The maximum gate charge and given voltages include 3.1nc @ 4.5v. The typical Vgs (th) (max) of the product is 2.5v @ 100µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 2a (ta). The product is available in 2 n-channel (dual) configuration. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 100v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 290pf @ 15v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 6-tsop-f is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 1.8w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6n815, a base product number of the product. The product is designated with the ear99 code number.
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