Toshiba Semiconductor and Storage SSM6N48FU,RF
Product Information
FET Feature:
Logic Level Gate
Base Part Number:
TLP512
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 100mA 300mW Surface Mount US6
Input Capacitance (Ciss) (Max) @ Vds:
15.1pF @ 3V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 100µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
3.2Ohm @ 10mA, 4V
Supplier Device Package:
US6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
300mW
Current - Continuous Drain (Id) @ 25°C:
100mA
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
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Yes. We ship SSM6N48FU,RF Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N48FU,RF. The FET features of the product include logic level gate. Base Part Number: tlp512. It features mosfet array 2 n-channel (dual) 30v 100ma 300mw surface mount us6. The product's input capacitance at maximum includes 15.1pf @ 3v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 100µa. The product has a 30v drain to source voltage. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 3.2ohm @ 10ma, 4v. us6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 300mw. The continuous current drain at 25°C is 100ma. The toshiba semiconductor and storage's product offers user-desired applications.
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