Category:
Power MOSFET
Dimensions:
2.9 x 2.3 x 0.75mm
Maximum Continuous Drain Current:
2.5 A, 3 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.6V
Maximum Drain Source Resistance:
8 mΩ, 137 mΩ
Package Type:
VEC
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V, 11 nC @ 10 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
420 pF@ -20 V, 505 pF@ 20 V
Length:
2.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
41 ns, 65 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Typical Turn-On Delay Time:
6.4 ns, 7.3 ns
FET Feature:
Logic Level Gate
Base Part Number:
VEC2616
Detailed Description:
Mosfet Array N and P-Channel 60V 3A, 2.5A 1W Surface Mount SOT-28FL/ECH8
Input Capacitance (Ciss) (Max) @ Vds:
505pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
80mOhm @ 1.5A, 10V
Supplier Device Package:
SOT-28FL/ECH8
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1W
Current - Continuous Drain (Id) @ 25°C:
3A, 2.5A
Manufacturer:
ON Semiconductor
