Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
8.1 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
23 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.2V
Height:
1.05mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
14.5 mΩ
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
29 A
Minimum Gate Threshold Voltage:
1.2V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
FET Feature:
Standard
Base Part Number:
NVMFD5
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 40V 10.5A (Ta), 29A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Input Capacitance (Ciss) (Max) @ Vds:
420pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
8.1nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.2V @ 20µA
Drain to Source Voltage (Vdss):
40V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 7.5A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3.1W (Ta), 23W (Tc)
Current - Continuous Drain (Id) @ 25°C:
10.5A (Ta), 29A (Tc)
Manufacturer:
ON Semiconductor
