ON Semiconductor NTTD1P02R2G

ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NTTD1
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 1.45A 500mW Surface Mount Micro8™
Input Capacitance (Ciss) (Max) @ Vds:
265pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Rds On (Max) @ Id, Vgs:
160mOhm @ 1.45A, 4.5V
Supplier Device Package:
Micro8™
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
500mW
Current - Continuous Drain (Id) @ 25°C:
1.45A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTTD1P02R2G. The FET features of the product include logic level gate. Base Part Number: nttd1. It features mosfet array 2 p-channel (dual) 20v 1.45a 500mw surface mount micro8™. The product's input capacitance at maximum includes 265pf @ 16v. The maximum gate charge and given voltages include 10nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.4v @ 250µa. The product has a 20v drain to source voltage. Moreover, the product comes in 8-tssop, 8-msop (0.118", 3.00mm width). It has a maximum Rds On and voltage of 160mohm @ 1.45a, 4.5v. micro8™ is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 500mw. The continuous current drain at 25°C is 1.45a. The on semiconductor's product offers user-desired applications.

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Multiple Devices 06/Oct/2006(PCN Obsolescence/ EOL)
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NTTD1P02R2(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NTTD1P02R2G and the best services all around the world ET14542212. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NTTD1P02R2G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor NTTD1P02R2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTTD1P02R2G. We stock a large inventory containing a wide range of variety ET14542212, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor NTTD1P02R2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14542212 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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