ON Semiconductor NTMD5836NLR2G

ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NTMD58
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 40V 9A, 5.7A 1.5W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
2120pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
50nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
40V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
12mOhm @ 10A, 10V
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.5W
Current - Continuous Drain (Id) @ 25°C:
9A, 5.7A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMD5836NLR2G. The FET features of the product include logic level gate. Base Part Number: ntmd58. It features mosfet array 2 n-channel (dual) 40v 9a, 5.7a 1.5w surface mount 8-soic. The product's input capacitance at maximum includes 2120pf @ 20v. The maximum gate charge and given voltages include 50nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 40v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 12mohm @ 10a, 10v. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1.5w. The continuous current drain at 25°C is 9a, 5.7a. The on semiconductor's product offers user-desired applications.

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Multiple Devices 24/Jul/2015(PCN Obsolescence/ EOL)
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NTMD5836NL(Datasheets)

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