ON Semiconductor NTLJD3119CTAG

ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NTLJD31
Detailed Description:
Mosfet Array N and P-Channel 20V 2.6A, 2.3A 710mW Surface Mount 6-WDFN (2x2)
Input Capacitance (Ciss) (Max) @ Vds:
271pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
3.7nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Series:
µCool™
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
65mOhm @ 3.8A, 4.5V
Supplier Device Package:
6-WDFN (2x2)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
710mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
2.6A, 2.3A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTLJD3119CTAG. The FET features of the product include logic level gate. Base Part Number: ntljd31. It features mosfet array n and p-channel 20v 2.6a, 2.3a 710mw surface mount 6-wdfn (2x2). The product's input capacitance at maximum includes 271pf @ 10v. The maximum gate charge and given voltages include 3.7nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product µcool™, is a highly preferred choice for users. Moreover, the product comes in 6-wdfn exposed pad. It has a maximum Rds On and voltage of 65mohm @ 3.8a, 4.5v. 6-wdfn (2x2) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 710mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 2.6a, 2.3a. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Mar/2012(PCN Obsolescence/ EOL)
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NTLJD3119C(Datasheets)

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