ON Semiconductor NTHD3100CT3

ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NTHD31
Detailed Description:
Mosfet Array N and P-Channel 20V 2.9A, 3.2A 1.1W Surface Mount ChipFET™
Input Capacitance (Ciss) (Max) @ Vds:
165pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
2.3nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
80mOhm @ 2.9A, 4.5V
Supplier Device Package:
ChipFET™
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.1W
Current - Continuous Drain (Id) @ 25°C:
2.9A, 3.2A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTHD3100CT3. The FET features of the product include logic level gate. Base Part Number: nthd31. It features mosfet array n and p-channel 20v 2.9a, 3.2a 1.1w surface mount chipfet™. The product's input capacitance at maximum includes 165pf @ 10v. The maximum gate charge and given voltages include 2.3nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has a 20v drain to source voltage. Moreover, the product comes in 8-smd, flat lead. It has a maximum Rds On and voltage of 80mohm @ 2.9a, 4.5v. chipfet™ is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 1.1w. The continuous current drain at 25°C is 2.9a, 3.2a. The on semiconductor's product offers user-desired applications.

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Multiple Devices 06/Oct/2006(PCN Obsolescence/ EOL)
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NTHD3100C(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NTHD3100CT3 and the best services all around the world ET14541851. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NTHD3100CT3, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

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