ON Semiconductor NTGD3133PT1G

ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NTGD31
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 1.6A 560mW Surface Mount 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
5.5nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
145mOhm @ 2.2A, 4.5V
Supplier Device Package:
6-TSOP
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
560mW
Current - Continuous Drain (Id) @ 25°C:
1.6A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTGD3133PT1G. The FET features of the product include logic level gate. Base Part Number: ntgd31. It features mosfet array 2 p-channel (dual) 20v 1.6a 560mw surface mount 6-tsop. The product's input capacitance at maximum includes 400pf @ 10v. The maximum gate charge and given voltages include 5.5nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.4v @ 250µa. The product has a 20v drain to source voltage. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 145mohm @ 2.2a, 4.5v. 6-tsop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 560mw. The continuous current drain at 25°C is 1.6a. The on semiconductor's product offers user-desired applications.

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Multiple Devices 21/Jan/2010(PCN Obsolescence/ EOL)
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NTGD3133P(Datasheets)

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