ON Semiconductor NDC7001C
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
1.1 nC @ 10 V, 1.6 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
960 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Width:
1.7mm
Length:
3mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
340 mA, 510 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
4 Ω, 10 Ω
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NDC7001
Detailed Description:
Mosfet Array N and P-Channel 60V 510mA, 340mA 700mW Surface Mount SuperSOT™-6
Input Capacitance (Ciss) (Max) @ Vds:
20pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
1.5nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
2Ohm @ 510mA, 10V
Supplier Device Package:
SuperSOT™-6
Manufacturer Standard Lead Time:
52 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
700mW
Current - Continuous Drain (Id) @ 25°C:
510mA, 340mA
Manufacturer:
ON Semiconductor
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Yes. We ship NDC7001C Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NDC7001C. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 1.1 nc @ 10 v, 1.6 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 960 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sot-23. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 340 ma, 510 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 4 ω, 10 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. Base Part Number: ndc7001. It features mosfet array n and p-channel 60v 510ma, 340ma 700mw surface mount supersot™-6. The product's input capacitance at maximum includes 20pf @ 25v. The maximum gate charge and given voltages include 1.5nc @ 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 2ohm @ 510ma, 10v. supersot™-6 is the supplier device package value. It has typical 52 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 700mw. The continuous current drain at 25°C is 510ma, 340ma. The on semiconductor's product offers user-desired applications.
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