ON Semiconductor MVDF1N05ER2G

ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
MVDF1
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 50V 2A 2W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
12.5nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
50V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
300mOhm @ 1.5A, 10V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
2W
Current - Continuous Drain (Id) @ 25°C:
2A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MVDF1N05ER2G. The FET features of the product include logic level gate. Base Part Number: mvdf1. It features mosfet array 2 n-channel (dual) 50v 2a 2w surface mount 8-soic. The product's input capacitance at maximum includes 330pf @ 25v. The maximum gate charge and given voltages include 12.5nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 50v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 300mohm @ 1.5a, 10v. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 2w. The continuous current drain at 25°C is 2a. The on semiconductor's product offers user-desired applications.

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Multiple Devices 17/Apr/2015(PCN Obsolescence/ EOL)
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MVDF1N05E(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor MVDF1N05ER2G and the best services all around the world ET14536899. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor MVDF1N05ER2G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor MVDF1N05ER2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at MVDF1N05ER2G. We stock a large inventory containing a wide range of variety ET14536899, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor MVDF1N05ER2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14536899 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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