ON Semiconductor FDZ1323NZ
Product Information
Dimensions:
2.3 x 1.3 x 0.15mm
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
20 mΩ
Package Type:
WLCSP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1545 pF @ 10 V
Length:
2.3mm
Pin Count:
6
Typical Turn-Off Delay Time:
34 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.15mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
Logic Level Gate
Base Part Number:
FDZ1323
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 10A 500mW Surface Mount 6-WLCSP (1.3x2.3)
Input Capacitance (Ciss) (Max) @ Vds:
2055pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Series:
PowerTrench®
Package / Case:
6-XFBGA, WLCSP
Rds On (Max) @ Id, Vgs:
13mOhm @ 1A, 4.5V
Supplier Device Package:
6-WLCSP (1.3x2.3)
Manufacturer Standard Lead Time:
40 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
500mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
10A
Manufacturer:
ON Semiconductor
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14520084 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14520084.
Yes. We ship FDZ1323NZ Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDZ1323NZ. The given dimensions of the product include 2.3 x 1.3 x 0.15mm. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers common drain transistor configuration. It has a maximum of 20 v drain source voltage. It provides up to 20 mω maximum drain source resistance. The package is a sort of wlcsp. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1545 pf @ 10 v . Its accurate length is 2.3mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 34 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.15mm. In addition, it has a typical 12 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. The FET features of the product include logic level gate. Base Part Number: fdz1323. It features mosfet array 2 n-channel (dual) common drain 20v 10a 500mw surface mount 6-wlcsp (1.3x2.3). The product's input capacitance at maximum includes 2055pf @ 10v. The maximum gate charge and given voltages include 24nc @ 10v. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 6-xfbga, wlcsp. It has a maximum Rds On and voltage of 13mohm @ 1a, 4.5v. 6-wlcsp (1.3x2.3) is the supplier device package value. It has typical 40 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual) common drain. The maximum power of the product is 500mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 10a. The on semiconductor's product offers user-desired applications.
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