ON Semiconductor FDW2510NZ

ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
FDW25
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 6.4A 1.1W Surface Mount 8-TSSOP
Input Capacitance (Ciss) (Max) @ Vds:
870pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Series:
PowerTrench®
Package / Case:
8-TSSOP (0.173", 4.40mm Width)
Rds On (Max) @ Id, Vgs:
24mOhm @ 6.4A, 4.5V
Supplier Device Package:
8-TSSOP
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.1W
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
6.4A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDW2510NZ. The FET features of the product include logic level gate. Base Part Number: fdw25. It features mosfet array 2 n-channel (dual) 20v 6.4a 1.1w surface mount 8-tssop. The product's input capacitance at maximum includes 870pf @ 10v. The maximum gate charge and given voltages include 12nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-tssop (0.173", 4.40mm width). It has a maximum Rds On and voltage of 24mohm @ 6.4a, 4.5v. 8-tssop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1.1w. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 6.4a. The on semiconductor's product offers user-desired applications.

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FDW2510NZ(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDW2510NZ and the best services all around the world ET14520044. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDW2510NZ, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FDW2510NZ is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDW2510NZ. We stock a large inventory containing a wide range of variety ET14520044, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDW2510NZ. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14520044 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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