Category:
Power MOSFET
Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
3.3 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
62 V
Maximum Gate Threshold Voltage:
3V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.3 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
300 pF @ 15 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
8700 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.27 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Typical Turn-On Delay Time:
630 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
132 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDSS2
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 62V 3.3A 2.27W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
4.3nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
Automotive, AEC-Q101, PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
110mOhm @ 3.3A, 10V
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
2.27W
Drain to Source Voltage (Vdss):
62V
Current - Continuous Drain (Id) @ 25°C:
3.3A
Manufacturer:
ON Semiconductor
