Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
2.9 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8 nC @ 4.5 V, 16 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
765 pF @ -30 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
27 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
190 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDS99
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 60V 2.9A 900mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
1020pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
105mOhm @ 2.9A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
46 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
900mW
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
2.9A
Manufacturer:
ON Semiconductor
