Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
9.2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
1.2V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Maximum Drain Source Resistance:
23 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
FDS89
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 7A 1.6W Surface Mount 8-SO
Input Capacitance (Ciss) (Max) @ Vds:
635pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
23mOhm @ 7A, 10V
Supplier Device Package:
8-SO
Manufacturer Standard Lead Time:
50 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.6W
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
7A
Manufacturer:
ON Semiconductor
