Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
5 A, 7 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
35 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.5 nC @ 5 V, 5.7 nC @ 5 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
540 pF@ -15 V, 570 pF@ 15 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
20 ns, 23 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W, 2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-25 V, -20 V, +20 V, +25 V
Height:
1.575mm
Typical Turn-On Delay Time:
8 ns, 12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
37 mΩ, 87 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDS89
Detailed Description:
Mosfet Array N and P-Channel 35V 7A, 5A 900mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
570pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
7.7nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
24mOhm @ 7A, 10V
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
900mW
Drain to Source Voltage (Vdss):
35V
Current - Continuous Drain (Id) @ 25°C:
7A, 5A
Manufacturer:
ON Semiconductor
