ON Semiconductor FDS8958B
Product Information
Maximum Continuous Drain Current:
4.5 A, 6.4 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.3 nC @ 10 V, 14 nC @ 10 V
Channel Type:
N, P
Length:
4.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W, 2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-25 V, -20 V, +20 V, +25 V
Height:
1.575mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
39 mΩ, 80 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDS8958
Detailed Description:
Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
540pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
26mOhm @ 6.4A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
46 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
900mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
6.4A, 4.5A
Manufacturer:
ON Semiconductor
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Yes. We ship FDS8958B Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDS8958B. While 4.5 a, 6.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.9mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 8.3 nc @ 10 v, 14 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.9mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.6 w, 2 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, -20 v, +20 v, +25 v. In addition, the height is 1.575mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 39 mω, 80 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: fds8958. It features mosfet array n and p-channel 30v 6.4a, 4.5a 900mw surface mount 8-soic. The product's input capacitance at maximum includes 540pf @ 15v. The maximum gate charge and given voltages include 12nc @ 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 26mohm @ 6.4a, 10v. 8-soic is the supplier device package value. It has typical 46 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 900mw. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 6.4a, 4.5a. The on semiconductor's product offers user-desired applications.
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