Maximum Continuous Drain Current:
7.3 A, 8.6 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V, 33 nC @ 10 V
Channel Type:
N, P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-25 V, -20 V, +20 V, +25 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
17 mΩ, 21 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDS8858
Detailed Description:
Mosfet Array N and P-Channel 30V 8.6A, 7.3A 900mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
1205pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
17mOhm @ 8.6A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
43 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
900mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
8.6A, 7.3A
Manufacturer:
ON Semiconductor
