Maximum Continuous Drain Current:
7.5 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
31 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 5 V
Channel Type:
N
Length:
4.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
FET Feature:
Logic Level Gate
Base Part Number:
FDS6990
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 900mW Surface Mount 8-SO
Input Capacitance (Ciss) (Max) @ Vds:
1235pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
18mOhm @ 7.5A, 10V
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
900mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
7.5A
Manufacturer:
ON Semiconductor
