ON Semiconductor FDS4895C

ON Semiconductor

Product Information

FET Feature:
Standard
Base Part Number:
FDS48
Detailed Description:
Mosfet Array N and P-Channel 40V 5.5A, 4.4A 900mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
410pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
5V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
39mOhm @ 5.5A, 10V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
900mW
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
5.5A, 4.4A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDS4895C. The FET features of the product include standard. Base Part Number: fds48. It features mosfet array n and p-channel 40v 5.5a, 4.4a 900mw surface mount 8-soic. The product's input capacitance at maximum includes 410pf @ 20v. The maximum gate charge and given voltages include 10nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 39mohm @ 5.5a, 10v. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 900mw. The product has a 40v drain to source voltage. The continuous current drain at 25°C is 5.5a, 4.4a. The on semiconductor's product offers user-desired applications.

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FDS4895C(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDS4895C and the best services all around the world ET14519792. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDS4895C, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FDS4895C is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDS4895C. We stock a large inventory containing a wide range of variety ET14519792, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDS4895C. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14519792 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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